電気的特性によるTiスパッタ薄膜/Si,GaAs接触界面に関する研究
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概要
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Semiconductor devices include large numbers of metal/semiconductor contacts. The contacts need the low resistance and high reliability since microprocessing of devices is progressing. Therefore it is necessary to develop the new contact materials and new processing technology. In this study, to understand and control interfacial phenomena, the refractory metal/semiconductor contacts formed by RF magnetron sputtering have been studied with I-V, 1/C^2-V properties before and after surface cleaning and annealing of the Si and GaAs wafers. Schottky barrier heights of Ti/Si contacts indicated the nearly constant value (0.8〜0.9eV). And those of Ti/GaAs contacts indicated 0.6〜0.8eV. The Ti/Si contact before surface cleaning and after 700℃ heating showed the ohmic contact, but the other Ti/Si and Ti/GaAs contacts showed the rectifying contact. The Ti/GaAs contact surface after 700℃ heating was discolored black.
- 秋田工業高等専門学校の論文
- 2004-02-28