電気的特性による金属薄膜/半導体接触界面の研究

概要

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ULSI includes many microscopic metal/semiconductor contacts. The microscopic inter- faces cause some problems such as a metal-semiconductor interaction at room temperature, which can spoil semiconductor devices. Even now, there is no valid model for the barrier formation at the metal/semiconductor interfaces. The basic study for the metal/semiconductor interfaces is worth recently. In order to understand the phenomena on metal/semiconductor interfaces, we have measured electrical properties of metal (Au, Pt, Cu, AD/II-VI (ZnSe, CdTe, ZnTe, ZnO) compound semiconductor contacts and Ti, Ni/GaAs contacts formed by RF magnetron sputtering with the metal film thickness lμm. On the metal/II-VI compound semiconductor contacts, Cu/ZnSe, Al/ZnSe, Al/ZnO showed that the index of interfacial behavior S determines the mechanism of barrier formation. And almost of the ohmic contacts obtained from these experiments seem to be due to the alloys at interfaces formed by sputtering. On the Ti, Ni/GaAs contacts, imperfect rectified properties were observed because of the higher concentration of impurities in the GaAs substrate. And the annealing contributed to change into the ohmic or improved characteristics.
秋田工業高等専門学校の論文
2004-02-28