Valence Band and Bandgap States of Ferroelectric SrBi_2Ta_2O_9 Thin Films

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概要

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• Ultraviolet photoelectron spectroscopy(UPS), X-ray photoelectron spectroscopy(XPS)and surface photovoltage spectroscopy(SPV)were used to determine the electronic structure near the bandgap of strontium bismuth tantalate(SBT)thin films. The UPS results for nearly stoichiometric SBT have been compared with tight-binding calculations. The spectra for bismuth-excess SBT indicate additional density of states(DOS)in the wide bandgap of the material. SPV studies indicate that the surface bandgap of bismuth-excess SBT is approximately 2 eV, which also confirms that there are additional surface states in the bandgap. These electronic structural data are used to explain the observed dependency of the electrical properties of the SBT/electrode junction on the bismuth concentration.

• 社団法人応用物理学会の論文
• 2000-04-01

著者

• Scott James

  Earth Sciences Department Cambridge University

• WATANABE Koji

  Core Technology Development Center, Sony Corporation Core Technology & Network Company

• HARTMANN Andreas

  Surface Science & Technology, The University of New South Wales

• LAMB Robert

  Surface Science & Technology, The University of New South Wales

• CRAIG Richard

  School of Mathematical and Physical Science, Murdoch University

• THURGATE Steve

  School of Mathematical and Physical Science, Murdoch University

• Craig Richard

  School Of Mathematical And Physical Science Murdoch University

• Hartmann Andreas

  Surface Science & Technology The University Of New South Wales

• Lamb Robert

  Surface Science & Technology The University Of New South Wales

• Thurgate Steve

  School Of Mathematical And Physical Science Murdoch University

• Watanabe Koji

  Core Technology Development Center Sony Corporation Core Technology & Network Company

関連論文

• Valence Band and Bandgap States of Ferroelectric SrBi_2Ta_2O_9 Thin Films

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