Effects of Backgate Voltage on Electrical Characteristics of Poly-Si Thin Film Transistors Fabricated on Stainless-Steel Substrate

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概要

• 論文の詳細を見る
• 2000-12-15

著者

• Serikawa Tadashi

  Ntt Cyber Space Laboratories:(present Address)ntt Electronics Corporation

• Omata Fujio

  Ntt Cyber Space Laboratories

関連論文

• Effects of Backgate Voltage on Electrical Characteristics of Poly-Si Thin Film Transistors Fabricated on Stainless-Steel Substrate
• High-Mobility Poly-Si Thin Film Transistors Fabricated on Stainless-Steel Foils by Low-Temperature Processes Using Sputter-Depositions

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