The Integration of In_x Ga_<1-x>N Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

スポンサーリンク

概要

• 論文の詳細を見る

• Indium-gallium nitride(InGaN)multiple-quantum-well ridge-waveguide laser diodes(LDs)grown by metalorganic chemical vapor deposition on sapphire substrates were successfully transferred onto Cu substrates using a laser lift-off(LLO)process. Characterization of the InGaN LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. The threshold current, under pulsed operation, for a 3 μm ridge-waveguide device and the laser-emission spectrum remained essentially unchanged after the LLO process. In addition, the conductive Cu substrate permitted realization of LDs with vertical-current injection using the Cu as the backside contact.

• 社団法人応用物理学会の論文
• 2000-12-01

著者

• TEEPE Mark

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

• KNEISSL Michael

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

• Wong William

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

• Mei Ping

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

• TREAT David

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

• JOHNSON Noble

  XEROX Palo Alto Research Center, Electronic Materials Laboratory

関連論文

• The Integration of In_x Ga_N Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

スポンサーリンク