Strains in InAs Quantum Dots Embedded in GaAs : A Finite Element study

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概要

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• Strains in InAs quantum dots embedded in GaAs have been examined using a 2-D axi-symmetric finite element method within a thermo-mechanical framework.The initial shape of the dot was assumed to be conical in 3-D.results show that the shape and the width/height ratio are critical in determining the strains within the quantum dots.Results of the calculation are compared with the results of other calculation and experimental measurements of strains using the scanning tunneling microscope (STM).

• 社団法人応用物理学会の論文
• 2000-07-01

著者

• Muralidharan Govindarajan

  Institute Of Microelectoronics

関連論文

• Strains in InAs Quantum Dots Embedded in GaAs : A Finite Element study

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