Electron Emission from Graded Al_xGa_<1-x>N/GaN Negative-Electron-Affinity Cold Cathodes

スポンサーリンク

概要

• 論文の詳細を見る

• A new cold cathode based on Schottky junction using the III-V nitride semiconductor which exhibits negative-electronaffinity(NEA)was proposed. The cold cathode was composed of non-doped graded Al_xGa_<1-x>N/n-type GaN layers grown by metal organic chemical vapor deposition(MOCVD)on sapphire(0001)substrates and thin surface electrode acting as Schottky contact. A part of electrons led to the NEA Al_xGa_<1-x>N surface smoothly by band-engineering, in which Al composition x increased continually toward the surface from the n-GaN side, was emitted through the thin surface electrode. The emission current of a few μA/cm^2 was observed under forward bias of about 5 V for the III-V nitride Schottky junction.

• 社団法人応用物理学会の論文
• 2000-07-01

著者

• DEGUCHI Masahiro

  Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd

• UENOYAMA Takeshi

  Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd

関連論文

• Photo-induced CO_2 Reduction with GaN Electrode in Aqueous System
• CO2 Conversion with Light and Water by GaN Photoelectrode
• Enhanced Capability of Photoelectrochemical CO
• Electron Emission from Graded Al_xGa_N/GaN Negative-Electron-Affinity Cold Cathodes
• Enhanced Capability of Photoelectrochemical CO₂ Conversion System Using an AlGaN/GaN Photoelectrode (Special Issue : Recent Advances in Nitride Semiconductors)

スポンサーリンク