Properties of Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy : Semiconductors
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概要
- 論文の詳細を見る
- 2001-01-15
著者
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Lee Kyoyeol
Compound Semiconductors Samsung Advanced Institute Of Technology:department Of Ceramic Materials Res
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AUH Keunho
Department of Ceramic Materials Research Institute, Hanyang University
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Auh Keunho
Department Of Ceramic Materials Research Institute Hanyang University