Detection of Nanopipes in GaN Films by Localized Avalanche Breakdown Using NaOH Electrolyte : Structure and Mechanical and Thermal Properties of Condensed Matter

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概要

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• Nanopipes in high-quality GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate were investigated by generating hollow etch pits. Hollow etch pits were formed on the surface of GaN films by localized avalanche breakdown using NaOH electrolyte. Using scanning electron microscopy (SEM) and atomic force microscopy (AFM), the relationship between hollow etch pits and crystalline defects in GaN films was investigated. It was found that hollow etch pits were formed at the nanopipes and electrical discharge occurred through these nanopipes at high electric fields, resulting in localized avalanche breakdown. Defect etching by localized avalanche breakdown was found to be a simple method to detect nanopipes in GaN films.

• 2001-11-15

著者

• Chen Shu-hsia

  Insititute Of Electro-optical Engineering National Chiao Tung University

• Chen Fu-chen

  Insititute Of Electro-optical Engineering National Chiao Tung University

• Ohkubo Mitsugu

  Department of Electrical and Electronics Engineering, Faculty of Engineering, Fukui University

• WU Yeong-Shium

  Insititute of Electro-Optical Engineering, National Chiao Tung University

関連論文

• Detection of Nanopipes in GaN Films by Localized Avalanche Breakdown Using NaOH Electrolyte : Structure and Mechanical and Thermal Properties of Condensed Matter
• Effects of Dissolved Oxygen on Anodic Etching of n-Type GaN Films Using a Sodium Hydroxide Electrolyte

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