Improvement of the Temperature Characteristic of 1.3 μm GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers : Optics and Quantum Electronics

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概要

• 論文の詳細を見る

• We report on the characteristics of tensile-strained 1.3 μm InGaAsP multi-quantum well lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide. Growth was carried out by all solid source atomic layer molecular beam epitaxy (ALMBE) without growth interruptions. Infinite length threshold current densities are as low as 176 A/cm^2 per quantum well for as cleaved broad area lasers. The values for the characteristic temperature T_0 are as high as 90 K for cavity lengths of 1200 μm. The improvement in T_0 is attributed to the increased effective barrier height by the short-period superlattices.

• 社団法人応用物理学会の論文
• 2002-05-15

著者

• GOLMAYO Dolores

  Instituto de Fisica de materiales, C.S.I.C.

• Golmayo Dolores

  Instituto De Microelectrdnica De Madrid

• POSTIGO Pablo

  Instituto de Microelectrdnica de Madrid

• GOMEZ Heberto

  Instituto de Microelectrdnica de Madrid

• RODRIGUEZ Daniel

  Departamento de Tecnologia Fotonica, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Uni

• DOTOR Maria

  Instituto de Microelectrdnica de Madrid

• Rodriguez Daniel

  Departamento De Tecnologia Fotonica Escuela Tecnica Superior De Ingenieros De Telecomunicacion Unive

関連論文

• Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations
• Improvement of the Temperature Characteristic of 1.3 μm GaInAsP Laser Diodes with GaInAsP/InP Short-Period Superlattice Barriers : Optics and Quantum Electronics

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