Properties of Etched Ga- and N-Faces of Freestanding GaN Substrate Using Inductively Coupled Plasma-Reactive Ion Etching : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
-
Park S
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
-
LEE Seong
Materials and Devices Research Center, Samsung Advanced Institute of Technology
-
PARK Sung
Materials Chemistry Research Center, Korea Institute of Science and Technology
-
SONG In
Materials and Devices Laboratory, Samsung Advanced Institute of Technology
-
LEE Kyoyeol
Materials and Devices Laboratory, Samsung Advanced Institute of Technology
-
HAN Jae
Materials and Devices Laboratory, Samsung Advanced Institute of Technology
-
Lee Kyoyeol
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
-
Park Sung
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
-
Lee Seong
Materials And Devices Research Center Samsung Advanced Institute Of Technology
-
Han Jae
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
-
Song In
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
-
Lee Seong
Materials And Devices Laboratory Samsung Advanced Institute Of Technology
関連論文
- A Field-Emission Display with an Asymmetric Electrostatic-Quadrupole Lens Structure
- Zigzag Double-Strands Consisting of "Coordination-Gallery,[Ag_3(NO_3)_3(Py_2S)_2・2H_2O]"
- Intramolecular Change Distribution and Related Properties in a Series of 3,6-Di-tert-butylbenzoquinonatocobalt Complexes Containing Piperidine
- Molecular Networks Consisting of Dumbbell-cage Motif:Structure and Anion Exchangeability of[Ag(Py_2S)_2・BF_4]_n(Py_2S=4, 4'-Dipyridyl Sulfide)
- Coligand Effects on Bonding Mode. Synthesis and Properties of (Diallylmalonato)platinum(II) Complexes of P vs. N Donating Ligand
- Properties of Etched Ga- and N-Faces of Freestanding GaN Substrate Using Inductively Coupled Plasma-Reactive Ion Etching : Semiconductors