Effects of Hydrogen and Deuterium Annealing on Plasma Process Induced Damages
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Kim Y‐k
Pusan National Univ. Pusan Kor
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Ahn Chang-geun
Pohang University Of Science And Technology Department Of Electrical Engineering
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KIM Jun-Hyung
Pohang University of Science and Technology, Department of Electrical Engineering
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KIM Young-Kwang
SAMSUNG Electronics Co.Ltd.
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LEE Yong-Hee
SAMSUNG Electronics Co.Ltd.
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KANG Bongkoo
Pohang University of Science and Technology, Department of Electrical Engineering
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Kim J‐h
Inje Univ. Kyungnam Kor
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Kang Bongkoo
Pohang University Of Science And Technology Department Of Electrical Engineering
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Kim Jun-hyung
Pohang University Of Science And Technology Department Of Electrical Engineering
関連論文
- Effects of Hydrogen and Deuterium Annealing on Plasma Process Induced Damages
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