Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering

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概要

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• Ge-doped indium oxide(H_2O_3)thin films were prepared by dc magnetron sputtering.The electrical resistivity, 1.6×10^-4Ωcm, of the film deposited at 200℃ was obtained at 5.5% Ge doping, This was comparable with that of ITO(tin-doped In_2O_3)films.Furthermore, amorphous films with Ge content higher than 5.0% were obtained when the substrate temperature was 20℃, while they were obtained with Ge content higher than 7.0% when the substrate temperature was 200℃.The electrical resistivity of 6.0% Ge-doped amorphous In_2O_3 film deposited at 20℃ is 4.1×10^-4Ωcm.The etching rate of the film by 5% HCl is 1400Å/min and is nine times as high as that of ITO films.

• 社団法人応用物理学会の論文
• 2000-04-15

著者

• Mizuno Masao

  Materials Research Laboratory Kobe Steel Ltd.

• MIYAMOTO Takashi

  Materials Research Laboratory, Kobe Steel Ltd.

• Miyamoto Takashi

  Materials Research Laboratory Kobe Steel Ltd.

関連論文

• Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering

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