Photoluminescence and Electroluminescence of (Gd_2O_3-Ga_2O_3) : Ce Thin Film

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概要

• 論文の詳細を見る

• A novel electroluminescence oxide phosphor(Gd_2O_3-Ga_2O_3):Ce has been prepared by electron beam evaporation.The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm.However, the electroluminescence of the (Gd_2O_3-Ga_2O_3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively.The optical absorption of (Gd_2O_3-Ga_2O_3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga_2O_3/(Gd_2O_3+Ga_2O_3)have also been described to investigate the origin of emission of photoluminescence and electroluminescence.

• 社団法人応用物理学会の論文
• 2000-04-15

著者

• Wang Xiaowei

  National Engineering Research Center For Optoelectronic Devices Institute Of Semiconductor Chinese A

• XU Xiulai

  Institute of Optoelectronic Technology, Northern Jiaotong University

• HOU Yanbing

  Institute of Optoelectronic Technology, Northern Jiaotong University

• XU Zheng

  Institute of Optoelectronic Technology, Northern Jiaotong University

• XU Xurong

  Institute of Optoelectronic Technology, Northern Jiaotong University

• Xu X

  Institute Of Optoelectronic Technology Northern Jiaotong University:laboratory Of Excited State Proc

• Hou Yanbing

  Institute Of Optoelectronic Technology Northern Jiaotong University

• Xu Zheng

  Institute Of Optoelectronic Technology Northern Jiaotong University

• Xu Xiulai

  Institute Of Optoelectronic Technology Northern Jiaotong University:laboratory Of Excited State Proc

関連論文

• Ion Beam Assisted Deposition of Tungsten on GaAs
• Photoluminescence and Electroluminescence of (Gd_2O_3-Ga_2O_3) : Ce Thin Film

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