Growth Sector Dependence of Low Frequency Raman Peaks Observed in Boron-Doped Homoepitaxial Diamond Particles

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概要

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• The Raman spectra of boron doped homoepitaxial diamond particles are investigated. The low frequency parts of the Raman scattering spectra of(100)and(111)growth sectors are very different in peak numbers and in peak positions. (100)facet has three broad bands centered at 580, 920 and 1020cm^<-1> (111)facet has only two centered at 500 and 1180cm^<-1>These low frequency peaks originate from Raman scattering by phonons far from the center of the Brillouin zone. Electronic Raman scattering may also contribute to part of the Raman spectra.

• 社団法人応用物理学会の論文
• 2000-05-15

著者

• Lin Zhangda

  State Key Laboralory Of Surface Physics Institute Of Physics Chinese Academy Of Sciences

• Feng Kean

  State Key Laboralory Of Surface Physics Institute Of Physics Chinese Academy Of Sciences

• Wang Yuguang

  State Key Laboralory Of Surface Physics Institute Of Physics Chinese Academy Of Sciences

• LI Hongdong

  State Key Laboralory of Surface Physics, Institute of Physics, Chinese Academy of Sciences

• Li Hongdong

  State Key Laboralory Of Surface Physics Institute Of Physics Chinese Academy Of Sciences

関連論文

• High-Resolution Electron Energy Loss Spectroscopy Studies of Growth Mechanism of Diamond Film (ダイヤモンド薄膜)
• Growth Sector Dependence of Low Frequency Raman Peaks Observed in Boron-Doped Homoepitaxial Diamond Particles

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