Low-Resistance Ohmic Contacts to AlGaN/GaN Heterostructure Using Si/Ti/Al/Cu/Au Multilayer Metal Scheme

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概要

• 論文の詳細を見る

• A Si/Ti/Al/Cu/Au metallization scheme has been developed to achieve a low specific contact resistivity to a n-AlGaN/GaN heterostructure. A specific contact resistivity as low as 3.8×10^<-5>Ωcm^2 was obtained after annealing at 800℃ for 30s. The interfacial reaction between the Si/Ti/Al/Cu/Au layers and the AlGaN was investigated by secondary-ion mass spectroscopy and transmission electron microscopy. An Al-Ti-Si-N intermetallic phase layer was observed at the interface. The ohmic contact formation is found to be related to Si diffusion and the formation of the Al-Ti-Si-N intermetallic phase layer.

• 社団法人応用物理学会の論文
• 2000-07-15

著者

• Kang Kwang-yong

  Research Department Electronics And Telecommunications Research Institutes

• Kang Kwang-yong

  Research Department Electronic &amp Telecommunications Research Institute

• YOUN Chang-Joo

  Semiconductor Physics Research Center, Chonbuk National University

• Youn Chang-joo

  Semiconductor Physics Research Center Chonbuk National University

関連論文

• Frequency-Locked Submillimeter Wave Generation from Josephson Junction Arrays
• Millimeter- and Submillimeter-Wave Phase-Locking in High-T_c Josephson Junction Arrays (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
• Low-Resistance Ohmic Contacts to AlGaN/GaN Heterostructure Using Si/Ti/Al/Cu/Au Multilayer Metal Scheme

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