Theoretical Analysis of Thermal/Electric-Field Poling Fused Silica with Multiple-Carrier Model

スポンサーリンク

概要

• 論文の詳細を見る

• Using the multiple-carrier model under the step-profile approximation of the charge density distribution, expression for the width and electric field distribution in the depletion region of fused silica samples after formed thermal/electric-field poling are derived. Theoretical results show that the peak electric field is located in the inner of the depletion region, and that the chemical formation of H^+/H_3O^+ may take place in the negatively depleted region. The depletion region width and the second-order susceptibility, which are 〜10μm and 〜0.35pm/V for the normal thermal/electric-field poling in air, respectively, are proportional to the square root of the applied dc voltage, and agree well with previous experimental results.

• 社団法人応用物理学会の論文
• 2000-08-15

著者

• Liu X

  Tsinghua Univ. Beijing Chn

• LIU Xueming

  Department of Electronic Engineering, Tsinghua University

• SUN Xiaohan

  Department of Electronic Engineering, Southeast University

• ZHANG Mingde

  Department of Electronic Engineering, Southeast University

• Sun Xiaohan

  Department Of Electronic Engineering Southeast University

• Zhang M

  Department Of Electronic Engineering Southeast University

関連論文

• Theoretical Analysis of Thermal/Electric-Field Poling Fused Silica with Multiple-Carrier Model
• Mechanism Analysis of Thermal/Electric Field Poling in Fused Silica

スポンサーリンク