Propagation Reactions and Structures of Hydrogenated Amorphous Silicon Depending on Plasma Sources with Different Excitation Frequencies

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概要

• 論文の詳細を見る

• Chemical reactions related to Si-network formation and its structure using SiH_nCl_m(n+m≨3)as the precursor decomposed by various plasma sources such as modulated radio frequency(RF), very high frequency(VHF)and electron cyclotron resonance(ECR)plasmas are investigated. The characteristics of each plasmas estimated by diagnostic study are systematically varied depending on the excitation frequency of the plasma source. We confirmed that atomic hydrogen is an effective agent to promote the propagation reaction of the Si network due to its strong reactivity under SiH_mCl_n flow. We also report that high-quality hydrogenated amorphous silicon films with defect density as low as 2 × 10^<15>cm^<-3> are successfully fabricated by ECR hydrogen plasma at growth rates higher than 10 Å/s.

• 社団法人応用物理学会の論文
• 2000-10-15

著者

• Azuma Masanobu

  Department Of Innovative And Engineering Materials Tokyo Institute Of Technology

• SHIMIZU Isamu

  Department of Innovative and Engineering Materials, Tokyo Institute of Technology

• Shimizu Isamu

  Department Of Innovative And Engineering Materials Tokyo Institute Of Technology

• Azuma Masanabu

  Department of Innovative and Engineering Materials, Tokyo Institute of Technology

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