Dynamic Three-Dimensional Mask-Wafer Positioning with Nanometer Exposure Overlay

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概要

• 論文の詳細を見る

• We describe a means of dynamically controlling the relative mask-wafer position in X, Y, and Z during proximity X-ray exposures. The axis of a point X-ray source is detected by a direct X-ray obscuration scheme. Point-source-induced exposure runout is controlled to <1nm along the source axis. Nanometer exposure overlay is measured by the spatial phase of fringes in resist, observed with a separate, normal-incidence microscope. These aligning and gapping techniques, in combination with the method of aligning the axis of a point X-ray source to a fiducial point on the mask, result in a minimum controlled exposure overlay of 2.5nm.

• 社団法人応用物理学会の論文
• 2000-12-30

著者

• SMITH Henry

  Research Laboratory of Electronics, Massachusetts Institute of Technology

• Smith Henry

  Research Laboratory Of Electronics Massachusetts Institute Of Technology

• MOON Euclid

  Research Laboratory of Electronics, Massachusetts Institute of Technology

• MEINHOLD Mitchell

  Research Laboratory of Electronics, Massachusetts Institute of Technology

• EVERETT Patrick

  Patrick N.Everett Consulting

• Moon Euclid

  Research Laboratory Of Electronics Massachusetts Institute Of Technology

• Meinhold Mitchell

  Research Laboratory Of Electronics Massachusetts Institute Of Technology

関連論文

• Extending Spatial-Phase-Locked Electron-Beam Lithography to Two Dimensions
• Dynamic Three-Dimensional Mask-Wafer Positioning with Nanometer Exposure Overlay

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