Performance of Graphite Pastes Doped with Various Materials as Back Contact for CdS/CdTe Solar Cell : Semiconductors

概要

論文の詳細を見る
To date the problem of developing a suitable back contact for CdS/CdTe solar cells has yet to be resolved. The Cu-doped graphite paste that is widely used as a back contact is associated with degradation problems due to possible Cu diffusion across the CdS/CdTe junction. This study was designed to find ways to improve the graphite paste for superior electrical contacts. Mixtures of graphite paste with various material constituents and dopants consisting of silver-, lead-, nickel-, antimony-, bismuth-, or phosphor-based compounds, were studied. Results show that the performances of solar cells fabricated from these graphite pastes vary with the change in the composition. In the cases of Ag_2 Te and Ni_2P, we studied their relationship with the solar cell characteristics with regard to do pant quantity, and further more in the case of Ag_2Te, with regard to the sintering temperature of the graphite electrode. A fill factor (F.F.) of over 0.65 and efficiencies over 13% were obtained with Ag_2Te, Ag_3PP_4, Ag_2MoO_4, and NiTe, and efficiencies over 12% were obtained with AgF, AgCl, Ni_2P, and Ni_3P.
社団法人応用物理学会の論文
2001-12-15