Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications : Semiconductors

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概要

• 論文の詳細を見る

• CdTe films for solar cell application were prepared at various growth temperatures by a vacuum evaporation system having close spacing between the source and substrate. The CdTe thin films had a cubic structure highly oriented with the (111) direction perpendicular to the substrate surface, regardless of the growth temperature. The crystallites are of random shape and reach up to about 2μm in size with in creasing growth temperature. The higher growth temperature contributed to the reduction of dark resistivity from 6×10^7Ω・cm at room temperature to 45.4×10^6・cm at 300°. The photovoltaic properties of the CdS/CdTe solar cell were considerably improved with the increase in the growth temperature, which was caused by the increase of (111) texture and grain size in CdTe films.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• PARK Yong-Kwan

  School of Electrical and Computer Engineering, Sungkyunkwan University

• Park Yong-kwan

  School Of Electrical And Computer Engineering Sungkyunkwan University

• LEE Jae-HyeongLEE

  School of Electrical and Computer Engineering, Sungkyunkwan University

• YANG Kea-Joon

  Department of Electronic Engineering, Chungju National University

• Yang Kea-joon

  Department Of Electronic Engineering Chungju National University

• Lee Jae-hyeonglee

  School Of Electrical And Computer Engineering Sungkyunkwan University

• Lee Jae-Hyeong

  School of Electrical and Computer Engineering, Sungkyunkwan University

関連論文

• Heat Treatment of Boron-Doped CdS Films Prepared by Chemical Bath Deposition for Solar Cell Applications
• Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications : Semiconductors

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