Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness : Semiconductors

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概要

• 論文の詳細を見る

• N-and P-type polycrystalline silicon thin film transistors are fabricated with channel thickness of 30 nm and 100 nm by metal induced lateral crystallization (MILC) and conventional solid-phase crystallization (SPC) of amorphous silicon. Significant improvement is obtained for the MILC devices by ultrathin channel layer. But for SPC devices, improvement is not as significant. The possible reasons are proposed and discussed.

• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Jin Zhonghe

  Dept. Of Information And Electronic Engineering Zhejiang University

関連論文

• Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness : Semiconductors

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