Oxidative Curing of Hydrogen Silsesquioxane Resin Films by Electron Bealn Irradiation without Additional Heatings and Characterization of the Cured Films : Semiconductors
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概要
- 論文の詳細を見る
We have developed a new curing process for hydrogen silsesquioxane (HSQ) films, which is applicable for interlayer dielectrics of LSI devices. In this process, an electron beam was used as a curing source. As a result, a practical curing speed was obtained without additional heat treatments at ambient pressure, since electron beams accelerate the oxidative curing reaction on HSQ. The cured films exhibited properties for practical use such as thermal stability, which are equivalent to films cured conventionally by heat treatnent. The cracking resistance of the electron-beam-cured films is excellent. A film of 3.0μm thickness did not show any cracks, whereas a thermally cured films with a thickness of 1.25μm showed cracks. Furthermore, electron-beam-cured films with a thickness of 2.5 μm did not show any cracks even after nitrogen annealing at 400℃ for 1h. The mechanism of oxidative curing of HSQ by electron beam irradiation was also studied.
- 社団法人応用物理学会の論文
- 2001-11-15
著者
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Kobayashi Akihiko
No.1 Group Aets & Development No.2 Department
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NAKAMURA Takashi
No.1 Group, AETS & Development No.2 Department
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SASAKI Motoshi
No.2 Group, AETS & Development No.1 Department, S & T Division, Dow Corning Toray Silicone Co., Ltd.
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SAWA Kiyotaka
No.1 Group, AETS & Development No.2 Department
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MINE Katsutoshi
No.1 Group, AETS & Development No.2 Department
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Sawa Kiyotaka
No.1 Group Aets & Development No.2 Department
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Sasaki Motoshi
No.2 Group Aets & Development No.1 Department S & T Division Dow Corning Toray Silicone Co.
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Mine Katsutoshi
No.1 Group Aets & Development No.2 Department