Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る

• Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current-voltage (1-V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.

• 社団法人応用物理学会の論文
• 2001-10-15

著者

• Kachi Tetsu

  Kachi Tetsutoyota Central Research & Development Laboratories Inc.

• Kodama Masahito

  Kodama Masahito

• Irokawa Yoshihiro

  Irokawa Yoshihiro

関連論文

• Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure : Semiconductors

スポンサーリンク