A Novel Meshing Scheme for Numerical Simulation of Semiconductor Process and Device with Arbitrary Topography

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概要

• 論文の詳細を見る

• We report a scheme of mesh generation from an arbitrary topography for semiconductor process and device simulation. A 3D complex structure is generated by the topography simulation based on the cell method. To translate from the planar/non-planar resulting structure into mesh structure, a novel approach is proposed by using the extraction of surface information, followed by generating 3D mesh with advancing front method (AFM). For the numerical simulation to calculating capacitances, finite element method (FEM) is employed. In this paper, this scheme is presented and verified with applications to the 4 conductors of 2μm width with non-planar surface as an example.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Won Taeyoung

  Computational Electronics Center School Of Electrical And Computer Engineering Inha University

• Yoon Sangho

  Computational Electronics Center School Of Electrical And Computer Engineering Inha University

• Kwon Ohseob

  Computational Electronics Center, School of Electrical and Computer Engineering, Inha University

• Kim Yountae

  Computational Electronics Center, School of Electrical and Computer Engineering, Inha University

• Kwon Ohseob

  Computational Electronics Center School Of Electrical And Computer Engineering Inha University

• Kim Y

  Computational Electronics Center School Of Electrical And Computer Engineering Inha University

関連論文

• A Novel Meshing Scheme for Numerical Simulation of Semiconductor Process and Device with Arbitrary Topography
• A Novel Meshing Scheme for Numerical Simulation of Semiconductor Process and Device with Arbitrary Topography
• An Advancing Front Meshing Algorithm Using NURBS for Semiconductor Process Simulation (Special lssue on SISPAD'99)
• Study on the Crosstalks at Interconnects of Integrated Circuits by FDTD-PML
• Study on the Crosstalks at Interconnects of Integrated Circuits by FDTD-PML

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