High Energy Radiation Degradation of High Speed Diodes for Space Applications

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概要

• 論文の詳細を見る

• High speed (GHz) bandwidth p-i-n photodiodes are an important element in gigabit communication modules. In this paper, we examine the degradation of the high-speed performance of 1.5GHz Si p-i-n photodiodes after MeV electron irradiation using IV, CV and Transient Laser Beam Induced Current.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Laird J.s.

  Japan Atomic Energy Research Institute(jaeri)

• Hirao T.

  Japan Atomic Energy Research Institute(JAERI)

• Onoda S.

  Japan Atomic Energy Research Institute(JAERI)

• Mori H.

  Japan Atomic Energy Research Institute(JAERI)

• Itoh H.

  Japan Atomic Energy Research Institute(JAERI)

• Hirao T

  Japan Atomic Energy Research Institute(jaeri)

• Laird J.

  Japan Atomic Energy Research Institute(JAERI)

関連論文

• High Energy Radiation Degradation of High Speed Diodes for Space Applications
• High Energy Radiation Degradation of High Speed Diodes for Space Applications

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