High Performance 880 nm (GaAl)As/GaAs Oxide Stripe Lasers with Very Low Degradation Rates at Temperatures up to 120℃

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概要

• 論文の詳細を見る

• A practical (GaAl)As/GaAs oxide stripe laser has been developed which has i) very low degradation rates (about 10<-5> h<-1> at l00℃ to 120℃ heat sink temperature) even at 880 nm, ii) high characteristic temperature (T_O=200 K to 240 K), iii) stable, linear characteristics up to high optical output and temperatures. The high-temperature degradation data at 5 mW per mirror are comparable to those of high-quality (GaAl)As IRED-s.

• 社団法人応用物理学会の論文
• 1981-09-05

著者

• Wolf H.

  Siemens Ag Research Laboratories

• METTLER K.

  Siemens AG, Research Laboratories

• ZSCHAUER K.-H.

  Siemens AG, Research Laboratories

• Mettler K.

  Siemens Ag Research Laboratories

• Zschauer K.-h.

  Siemens Ag Research Laboratories

関連論文

• High Performance 880 nm (GaAl)As/GaAs Oxide Stripe Lasers with Very Low Degradation Rates at Temperatures up to 120℃

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