Switching Characteristics of Amorphous-Silicon Field-Effect-Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• The Dynamic characteristics of amorphous-silicon field-effect-transistors were investigated. The experimental results showed that just after the input of a pulsed gate voltage, a large drain current flowed through the transistors, and that it decreased gradually to a static value. By using these dynamic characteristics, the switching speed of the transistors was estimated to be 100 times as high as that calculated from the static characteristics.

• 社団法人応用物理学会の論文
• 1981-06-05

著者

• Kawashima Masatoshi

  Department Of Occupational Health Graduate School Of Medical Science Kitasato University School Of M

• Kawashima Masatoshi

  Department Of Physical Electronics Tokyo Institute Of Technology

• MATUMURA Masakiyo

  Department of Physical Electronics, Tokyo Institute of Technology

• Matumura Masakiyo

  Department Of Physical Electronics Tokyo Institute Of Technology

関連論文

• Physician Job Satisfaction and Working Conditions in Japan
• Switching Characteristics of Amorphous-Silicon Field-Effect-Transistors
• Evaluation of Validity of the Urine Dipstick Test for Identification of Reduced Glomerular Filtration Rate in Japanese Male Workers Aged 40 Years and Over

スポンサーリンク