A New Analyzing Method for Non-Uniformly Doped MOS Capacitor C-t Characteristics in Lifetime Evaluation

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概要

• 論文の詳細を見る

• A new analyzing method for non-uniformly doped MOS capacitor C-t characteristics in lifetime evaluation has been developed. By analyzing the C-t characteristic in combination with the doping profile, which can be measured by the pulsed C-V method, the generation lifetime can be evaluated. The method is applied to a low-dose boron implanted MOS capacitor, and the generation lifetime can be evaluated as a function of depth.

• 社団法人応用物理学会の論文
• 1981-11-05

著者

• Miyake Masayasu

  Nippon Telegraph And Telephone Public Corporation Musashino Electrical Communication Laboratory

• HARADA Hiroyuki

  Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory

• Harada Hiroyuki

  Nippon Telegraph And Telephone Public Corporation Musashino Electrical Communication Laboratory

関連論文

• A New Analyzing Method for Non-Uniformly Doped MOS Capacitor C-t Characteristics in Lifetime Evaluation

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