Mechanical Damage Gettering Effect in Si
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概要
- 論文の詳細を見る
The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Sawada Renshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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KARAKI Toshiroh
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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WATANABE Junji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Karaki Toshiroh
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Watanabe Junji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Mechanical Damage Gettering Effect in Si
- Durability of Mechanical Damage Gettering Effect in Si Wafers