Surface Diffusion Coefficients on Stranski-Krastanov Layers

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概要

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• Quantitative surface diffusion coefficients in clustering systems are of crucial importance for thin film growth applications. In this letter we report the first determination of the activation energy for surface diffusion on the Stranski-Krastanov layer in a technological important heterosystem. The findings are based on previously published independent measurements of the activation energy for cluster growth and cluster formation from the free adatom concentration. For the Stranski-Krastanov layer thickness of Ge on Si(100) we obtain 3.08±0.16 monolayer equivalent coverage and for the activation energy of surface diffusion 0.84±0.14 eV.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Stoyanov Stoyan

  Institute For Solid State Research Research Centre Julich:(present Address) Institute Of Physical Ch

• ZINKE-ALLMANG Martin

  Institute of Thin Film and Ion Technology, Research Centre Julich

• Zinke-allmang Martin

  Institute Of Thin Film And Ion Technology Research Centre Julich

関連論文

• Surface Diffusion Coefficients on Stranski-Krastanov Layers

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