Characterization of Dielectric Etching Processes by X-Ray Photoelectron Spectroscopy Analyses in High Aspect Ratio Contact Holes

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概要

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• X-ray photoelectron spectroscopy (XPS) analyses of high aspect ratio structure etched in SiO_2 and organic low dielectric constant materials are presented. Analyses are performed after etching using commercial etching tools and standard processes developed for 0.18μm design rules. Using electron shadowing by adjacent features, differential charging of insulating features and angle-resolved XPS, it is possible to separate the contributions originating from the sidewalls and bottoms of high aspect ratio contact holes. Correlation between XPS analyses and etch mechanisms are also discussed.

• 社団法人応用物理学会の論文
• 1999-10-15

著者

• Joubert Olivier

  France Telecom Brance Developpement France And Also At Laboratoire Des Technologies De La Microelect

• Czuprynski P.

  France telecom, Branche developpement,

• Czuprynski P.

  France Telecom Branche Developpement

関連論文

• Characterization of Dielectric Etching Processes by X-Ray Photoelectron Spectroscopy Analyses in High Aspect Ratio Contact Holes

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