Photo-Leakage Current of Poly-Si Thin Film Transistors with Offset and Lightly Doped Drain Structure

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概要

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• The suppression of photo-leakage current (I_<photo>) has been an important issue in the fabrication of high-brightness liquid-crystal projectors. We have investigated the generation mechanism of I_<photo> in poly-Si thin film transistors (TFTs) with ant offset structure. It is found that photo is mainly generated at the offset region and the decrease in the offset length is important suppress I_<photo>. This is because the electric field is applied to the offset region and carriers, generated in the region, can be extracted. We have realized an offset poly-Si TFT with both high mobility and low I_<photo> by decreasing the offset length to 0.5 μm with the lateral etching method.

• 社団法人応用物理学会の論文
• 1999-10-15

著者

• Kobayashi Kazuhiro

  Advanced Display Development Dept. Lcd Business Planning Division Mitsubishi Electric Corporation:(p

• Niwano Yasunori

  Advanced Display Development Dept. Lcd Business Planning Division Mitsubishi Electric Corporation:(p

関連論文

• Photo-Leakage Current of Poly-Si Thin Film Transistors with Offset and Lightly Doped Drain Structure

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