High Performance 1.55 μm Quantum-Well Metal-Clad Ridge-Waveguide Distributed Feedback Lasers

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概要

• 論文の詳細を見る

• We present results on high performance 1.55μm InGaAs/InGaAsP multiple quantum well metal-clad ridge-waveguide distributed feedback lasers. The multilayer structure was grown entirely by low pressure metal-organic vapor phase epitaxy. For improved high speed modulation a small-area contact mask was used. As a result the following characteristics were obtained on the same device: 38 mW single-mode output power with a 3dB-bandwidth of 11 GHz and a linewidth of 3.5 MHz. Best values for the individual parameters are 71 mW, 11 GHz and 880 kHz.

• 社団法人応用物理学会の論文
• 1991-09-15

著者

• Rieger J.

  Siemens Ag Corporate Research And Development

• BORCHERT B.

  SIEMENS AG, Corporate Research and Development

• STEGMULLER B.

  SIEMENS AG, Corporate Research and Development

• BAUMEISTER H.

  SIEMENS AG, Corporate Research and Development

• VEUHOFF E.

  SIEMENS AG, Corporate Research and Development

• HEDRICH H.

  SIEMENS AG, Corporate Research and Development

• LANG H.

  SIEMENS AG, Corporate Research and Development

• Veuhoff E.

  Siemens Ag Corporate Research And Development

• Stegmuller B.

  Siemens Ag Corporate Research And Development

• Baumeister H.

  Siemens Ag Corporate Research And Development

• Borchert B.

  Siemens Ag Corporate Research And Development

• Lang H.

  Siemens Ag Corporate Research And Development

• Hedrich H.

  Siemens Ag Corporate Research And Development

関連論文

• High Performance 1.55 μm Quantum-Well Metal-Clad Ridge-Waveguide Distributed Feedback Lasers
• Narrow-Linewidth InGaAsP/InP Metal-Clad Ridge-Waveguide Distributed Feedback Lasers

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