Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices : B-2: GaAs FET/LED AND DETECTOR
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Daembkes Heinrich
University Of Duisburg Fb9 Solid State Electronics Department
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ARNOLD Norbert
University of Duisburg, FB9, Solid State Electronics Department
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HEIME Klaus
University of Duisburg, FB9, Solid State Electronics Department
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Heime Klaus
University Of Duisburg Fb9 Solid State Electronics Department
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Arnold Norbert
University Of Duisburg Fb9 Solid State Electronics Department