Design Limitations due to Substrate Currents and Secondary Impact Ionization Electrons in NMOS LSI's : A-2: MOS DEVICES/BASIC ASPECTS
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Kohyama Susumu
Research Laboratory Nec-toshiba Information Systems Inc.
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Matsunaga Jun-ichi
Research Laboratory Nec-toshiba Information Systems Inc.
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Konaka Masami
Research Laboratory Nec-toshiba Information Systems Inc.
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IIZUKA Hisakazu
Research Laboratory, NEC-TOSHIBA Information Systems Inc.
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Iizuka Hisakazu
Research Laboratory Nec-toshiba Information Systems Inc.