(Invited) Electron Beam Lithography in Practical Use for Integrated Circuits : A-6: ELECTRON BEAM TECHNOLOGY

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-03-01

著者

• Takeishi Yoshiyuki

  Toshiba Reaearch And Development Center Tokyo Shibaura Electric Co. Ltd.

• SANO Shun-ichi

  Cooperative Laboratories VLSI Technology Research Association

関連論文

• Drift-Velocity Saturation of Holes in Si Inversion Layers
• An Electron Beam Exposure System (VL-R1) : A-6: ELECTRON BEAM TECHNOLOGY
• Electrical Properties of Metal-GaAs Schottky Barrier Contacts
• (Invited) Electron Beam Lithography in Practical Use for Integrated Circuits : A-6: ELECTRON BEAM TECHNOLOGY

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