Characterization of Si(100) Surface after High Density HBr/Cl_2/O_2 Plasma Etching

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概要

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• The nature of deposited film on unmasked Si(100) surface after high density HBr/Cl_2/O_2 plasma etching has been investigated. The as-etched surface was treated sequentially with HF for different duration and monitored with atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). It was found that microscopic Si pillars are formed on the etched surface and might be attributed to the formation of micromasks. XPS surface analysis indicated the passivation film consists mainly of silicon oxides and oxybromides. Ab initio calculations using Si_4 cluster model suggested the direct attack of oxyhalide species on the surface as the energetically most favored process. It is also shown that HF treatment for 40s was effective in the complete removal of the residual film.

• 社団法人応用物理学会の論文
• 2000-01-15

著者

• Zhong Qing

  Chartered Semiconductor Manufacturing Ltd.

• Chan Lap

  Chartered Semiconductor Manufacturing Ltd.

• LOW Chun

  Department of Chemistry, Science Faculty, Kent Ridge, National University of Singapore

• CHIN Wee

  Department of Chemistry, Science Faculty, Kent Ridge, National University of Singapore

• TAN Kuang

  Department of Physics, Science Faculty, kent Ridge, National University of Singapore

• LOH Foo

  Department of Physics, Science Faculty, kent Ridge, National University of Singapore

• ZHOU Meisheng

  Chartered Semiconductor Manufacturing Ltd.

• Loh Foo

  Department Of Physics Science Faculty Kent Ridge National University Of Singapore

• Chin Wee

  Department Of Chemistry Science Faculty Kent Ridge National University Of Singapore

• Low Chun

  Department Of Chemistry Science Faculty Kent Ridge National University Of Singapore:chartered Semico

• Tan Kuang

  Department Of Physics Science Faculty Kent Ridge National University Of Singapore

関連論文

• Characterization of Si(100) Surface after High Density HBr/Cl_2/O_2 Plasma Etching

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