Device Physics of Ferroelectric Thin-Film Memnories

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概要

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• Band structure match-ups are given theoretically from X-ray photoemission spectroscopy (XPS) for the electrode interfaces between platinum electrodes and the ferroelectric thin-film materials commonly used for random access memories (DRAMs and nonvolatile FRAMs): strontium bismuth tantalate (SBT), barium strontium titanate (BST), and lead zirconate titanate (PZT). The results all agree with experimentally measured Schottky barrier heights. The electronegativity constant or S-factor (derivative of Schottky barrier height with respect to electron affinity) is found to be approximately 0.7 for these materials, not the purely ionic value of 1.0. The reduction of a factor of a million in the effective Richardson coefficient is explained. And the paradox of avalanche breakdown but decreasing breakdown fields with increasing temperature is reconciled.

• 社団法人応用物理学会の論文
• 1999-04-30

著者

• Scott J.f.

  School Of Physics University Of New South Wales

関連論文

• Device Physics of Ferroelectric Thin-Film Memnories

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