Extended Cavity Lasers in InGaAs-InGaAsP and GaInP-AlGaInP Multi-Quantum Well Structure Using a Sputtered SiO_2 Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Bryce A.catrina
Department Of Electronics & Electrical Engineering University Of Glasgow
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QIU Bocang
Department of Electronics & Electrical Engineering, University of Glasgow
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HAMILTON Craig
Department of Electronics & Electrical Engineering, University of Glasgow
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KE Maolong
Department of Electronics & Electrical Engineering, University of Glasgow
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KOWALSKI Olek
Department of Electronics & Electrical Engineering, University of Glasgow
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MCDOUGALL Stewart
Department of Electronics & Electrical Engineering, University of Glasgow
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MARSH John
Department of Electronics & Electrical Engineering, University of Glasgow
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Marsh J
Univ. Glasgow Glasgow Gbr
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Qiu Bocang
Department Of Electronics & Electrical Engineering University Of Glasgow
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Ke Maolong
Department Of Electronics & Electrical Engineering University Of Glasgow
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Kowalski Olek
Department Of Electronics & Electrical Engineering University Of Glasgow
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Hamilton Craig
Department Of Electronics & Electrical Engineering University Of Glasgow
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Mcdougall Stewart
Department Of Electronics & Electrical Engineering University Of Glasgow
関連論文
- Extended Cavity Lasers in InGaAs-InGaAsP and GaInP-AlGaInP Multi-Quantum Well Structure Using a Sputtered SiO_2 Technique
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