Low-Noise Bias Reliability of AlInAs/GaInAs Modulation-Doped Field Effect Transistors with Linearly Graded Low-Temperature Buffer Layers Grown on GaAs Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-02-28

著者

• Basile David

  Hewlett-packard Labs

• Su Chung-yi

  Hewlett-packard

• WAKITA Arlene

  Hewlett-Packard Labs

• ROHDIN Hans

  Hewlett-Packard Labs

• ROBBINS Virginia

  Hewlett-Packard Labs

• MOLL Nick

  Hewlett-Packard Labs

• NAGY Avelina

  Hewlett-Packard Labs

関連論文

• Low-Noise Bias Reliability of AlInAs/GaInAs Modulation-Doped Field Effect Transistors with Linearly Graded Low-Temperature Buffer Layers Grown on GaAs Substrates

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