Partial Pressure of Phosphorus and Arsenic Vapor Measured by Raman Scattering

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概要

• 論文の詳細を見る

• In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are presented. The ratio of the Raman intensities of different species in the gas is proportional to the ratio of the corresponding partial pressures. The results of this new method for measuring partial pressures will be compared with thermodynamical calculations. The presented method allows the on line monitoring of the vapor atmosphere during crystal growth or annealing processes, which may be important for optimizing growth conditions, doping by the gas phase or quality optimizing of wafers.

• 社団法人応用物理学会の論文
• 1999-02-28

著者

• Herms M

  Institute Of Experimental Physics University Of Mining And Technology:(present Address)kyoto Institu

• ROTH Katrin

  Institute of Experimental Physics, University of Mining and Technology

• KORTUS Jens

  Institute of Theoretical Physics, University of Mining and Technology

• HERMS Martin

  Institute of Experimental Physics, University of Mining and Technology

• POREZAG Dirk

  Complex Systems Theory Branch, Naval Research Laboratory

• PEDERSON Mark

  Complex Systems Theory Branch, Naval Research Laboratory

• Porezag Dirk

  Complex Systems Theory Branch Naval Research Laboratory

• Pederson Mark

  Complex Systems Theory Branch Naval Research Laboratory

• Roth Katrin

  Institute Of Experimental Physics University Of Mining And Technology

• Kortus Jens

  Institute Of Theoretical Physics University Of Mining And Technology

関連論文

• Partial Pressure of Phosphorus and Arsenic Vapor Measured by Raman Scattering

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