Growth of Low Etch Pit Density Homogeneous 2" InP Crystals Using a Newly Developed Thermal Baffle

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概要

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• Low Etch pit density 2" InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm^<-2>. The minimum average EPD was about 200 cm^<-2>. Visible facets were observed and the crystal was somewhat rectangular. No lineage-type defects were observed even in the last portion of the crystal. Dislocation-free (DF) (EPD≦500 cm^<-2>) S-doped InP crystals were also obtained with lower S concentration using the newly developed baffle. The minimum S concentration for growing the DF crystal was 1.7×10^<18> cm^<-3>.

• 社団法人応用物理学会の論文
• 1999-02-28

著者

• Hirano Ryuichi

  Japan Energy Corporation Compound Semiconductor Materials Department

関連論文

• Growth of Low Etch Pit Density Homogeneous 2" InP Crystals Using a Newly Developed Thermal Baffle

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