Manipulations of Densities and Sizes during Self-Assembling Quantum Dots in Metal-Organic Vapour Phase Epitaxy

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概要

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• Densities and sizes of self-assembled 3-dimensional islands were studied in dependence of their deposition conditions. The materials system for more detailed studies was InP/GaAs, deposited by low-pressure metal-organic vapour phase epitaxy (MOVPE). The densities of stable islands follow very well the simple proportionality ρ=const・R/D, where R=deposition rate and D=the temperature dependent surface diffusion coefficient. The sizes of the 3-dimensional islands show inverse behaviour, what is to explain as an effect of distribution of the available material over the number of islands present at the surface. The bimodality in the shapes of 3-dimensional islands of InP on GaAs is strongly affected by deposition temperature and deposition rate. High temperatures/low deposition rates favour the formation of an almost pure population of fully developed islands with high aspect ratios and steep {111} and {110} facets. Low temperatures and high deposition rates favour the population of small, low aspect ratio islands with more flat facets. A comparison with other Stranski-Krastanow systems shows in general similar dependencies.

• 社団法人応用物理学会の論文
• 1999-12-30

著者

• SEIFERT Werner

  Solid State Physics, Lund University

• Carlsson Niclas

  Solid State Physics And Nanometer Structure Consortium Lund University:femtosecond Technology Resear

• Seifert Werner

  Solid State Physics And Nanometer Structure Consortium Lund University

• Johansson J

  Solid State Physics And Nanometer Structure Consortium Lund University

• JOHANSSON Jonas

  Solid State Physics and Nanometer Structure Consortium, Lund University

関連論文

• Spiral Growth of InGaN Nanoscale Islands on GaN
• Manipulations of Densities and Sizes during Self-Assembling Quantum Dots in Metal-Organic Vapour Phase Epitaxy
• Optimization of Overgrown Ex-Situ Processed GaAs Interfaces for a Resonant Tunneling PBT

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