Metalorganic Chemical Vapor Deposition of Complex Metal Oxide Thin Films by Liquid Source Chemical Vapor Deposition

概要

論文の詳細を見る
The implementation of ferroelectric thin films in advanced semiconductor devices is near; facile integration at ULSI geometries requires chemical vapor deposition (CVD) process technology. The low volatility and thermal stability of the existing source reagents has driven the development of liquid source CVD, in which composition is set by volumetric metering of liquids followed by flash vaporization. The methodology as well as early results for Ba<1-x>Sr_xTiO_3, Pb<1-x>(La_xZr<1-y>Ti_y)_<1-x/4>O_3 and SrBi_2Ta_2O_9 thin films, which are among the best reported for any deposition method, will be reviewed. These results establish liquid source CVD as a leading candidate to become the predominant deposition technology enabling the integration of ferroelectric hin films in ULSI devices.
社団法人応用物理学会の論文
1996-04-30