Material Characterizatiorn and Optimization for Ultrahigh-Speed Metal-Semiconductor-Metal Photodetectors

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概要

• 論文の詳細を見る

• Metal-semiconductor-metal photodetectors fabricated on different epitaxial layers of GaAs are investigated and optimized for applications to high-speed optical transmission systems. The devices exhibit full width at half-maximum (FWHM) times from 1.5 ps to 7 ps corresponding to carrier velocities exceeding 5×10^7 cm/s. In contrast to previously reported results, our results indicate that the use of low doped materials is recommended due to much better linearity and dynamic responsivity.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Kowalsky Wolfgang

  Department Of Optoelectronics University Of Ulm

• Sickmoller Markus

  Department of Optoelectronics, University of Ulm

• Sickmoller Markus

  Department Of Optoelectronics University Of Ulm

関連論文

• Heterostructures of Crystalline Organic and Inorganic Semiconduetors for Applications in Optoelectronic Integrated Circuits
• Material Characterizatiorn and Optimization for Ultrahigh-Speed Metal-Semiconductor-Metal Photodetectors
• Wavelength Selective Metal-Semiconductor-Metal Photodetector with Integrated Fabry-Perot Resonator for High Bandwidth Receivers
• Characterization of Dynamic Behaviour of Metal-Semiconductor-Metal Photodeteetors by Correlation Technique

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