Rough Polysilicon Film as a High-Performance Antireflective Layer for Sub-Half-Micron Photolithography
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概要
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A rough polysilicon film (or hemispherical grain (HSG) film) was proposed for use as a high-performance antireflection layer for the sub-half-micron photolithographic process, especially for polysilicon gate patterning. This HSG film was inserted between WSix film and TEOS oxide film or deposited on top of TEOS oxide film. Elimination of notching and good critical dimension control were achieved in each case. This method is more straightforward and less complex than the organic bottom antireflection coating (ARC) process and could be easily implemented in integrated circuit manufacturing.
- 社団法人応用物理学会の論文
- 1995-12-30
著者
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Liu Shun-ho
Submicron Technology Group Electronics Research & Service Organization (erso) Industrial Technol
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Dai Chang-ming
Submicron Technology Group Electronics Research & Service Organization (erso) Industrial Technol