Preparation of Te Films by Hot Wall Epitaxy

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概要

• 論文の詳細を見る

• Hot wall epitaxy technique has been used to deposit tellurium films on to glass and freshly cleaved mica substrates. Environmental conditions are optimized to obtain better crystallinity and deposition rate. Grain size as large as 12.0 μm on glass and 6.4 μm on mica substrate has been obtained. Structure of the films was analysed by X-ray diffraction and scanning electron microscopy.

• 社団法人応用物理学会の論文
• 1987-09-20

著者

• ATHWAL I.S.

  Solid State Research Laboratory, Department of Physics, Guru Nanak Dev University

• BEDI R.K.

  Solid State Research Laboratory, Department of Physics, Guru Nanak Dev University

関連論文

• Preparation of Te Films by Hot Wall Epitaxy

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