Lateral Seeding of Silicon-On-Insulator by Using an Elliptically-Shaped Laser Beam

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概要

• 論文の詳細を見る

• It has been demonstrated that an elliptically-shaped laser beam with an elliptical ratio of 20 can be successfully used to obtain a melt width as large as 160 μm. We also discuss an interesting experimental result in which the growth length of a single crystal from the seeding region on (100) Si substrates is larger in the scanning direction along <110> than along <100> in a lateral seeding process.

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• Fujii Eiji

  Semiconductor Laboratory Matsushita Electronics Corporation

• Senda Kohji

  Semiconductor Laboratory Matsushita Electronics Corporation

• HIROSHIMA Yoshimitsu

  Semiconductor Laboratory, Matsushita Electronics Corporation

• TAKAMURA Tohru

  Semiconductor Laboratory, Matsushita Electronics Corporation

• Takamura Tohru

  Semiconductor Laboratory Matsushita Electronics Corporation

• Hiroshima Yoshimitsu

  Semiconductor Laboratory Matsushita Electronics Corporation

関連論文

• Lateral Seeding of Silicon-On-Insulator by Using an Elliptically-Shaped Laser Beam

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