Characterization of Si Surface by Ellipsometry

スポンサーリンク

概要

• 論文の詳細を見る

• Surface characterization by ellipsometry is examined for Si wafer processed by mechanicalchemical polishing or RF sputter etching.The extinction coefficient k_2 of the Si wafer surface varies with the processing and is increased by RF sputter etching.The results of the characterization by ellipsometry are compared with those of RHEED or OS check.k_2 increases as the crystallographic quality becomes inferior, and the threshold value of k_2 to generate the OSF is 0.2.The experimental results of the characterization by ellipsometry are compatible with those by RHEED and OS check, so this method is useful for surface characterization of the Si Wafer.

• 社団法人応用物理学会の論文
• 1979-07-05

著者

• Itakura Masayuki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• OHIRA Fumikazu

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Ohira Fumikazu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Ellipsometric Measurement of Damage Depth Profiles for Ion Beam Processed Si Surface Layer
• Characterization of Si Surface by Ellipsometry
• The Scattering Centers in Dielectric Thin Film Optical Waveguides

スポンサーリンク